High Power Active Devices Abb

Power Converter Course, Warrington

High Power Active Devices Insert image here

12.05.2005 Insert image here

Insert image here

© ABB Switzerland Ltd - 1 5/27/2004

Eric Carroll, ABB Switzerland

© ABB Switzerland Ltd - 2 -

INTRODUCTION

Electronic Switches „

Thyristor Can be turned on by gate signal but can only be turned off by reversal of the anode current

„

Gate Turn-Off Thyristor (GTO) Can be turned on and off by the gate signal but requires large capacitor (snubber) across device to limit dv/dt

„

Transistor (transitional resistor)

© ABB Switzerland Ltd - 3 -

Can be turned on and off by the gate (or base) signal but has high conduction losses (its an amplifier, not a switch) „

Integrated Gate Commutated Thyristor (IGCT) Can be turned on and off by the gate signal, has low conduction loss and requires no dv/dt snubber

Available Self-Commutated Semiconductor Devices THYRISTORS

TRANSISTORS

Anode

Anode

Collector

GTO (Gate Turn-Off Thyristor)

BIPOLAR TRANSISTOR P

P

MCT (MOS-Controlled Thyristor) N P

Gate

Gate

N

Base

P

P

FCTh (Field-Controlled Thyristor) N

DARLINGTON TRANSISTOR P

N

MOSFET

N P

N

FCT (Field Controlled Transistor)

SITh (Static Induction Thyristor)

Emitter

MTO (MOS Turn-Off Thyristor) Cathode

Cathode

EST (Emitter-Switched Thyristor) Anode

© ABB Switzerland Ltd - 4 -

IGTT (Insulated Gate Turn-off Thyristor)

SIT (Static Induction Transistor) IEGT (Injection EnhancedCollector (insulated) Gate Transistor)

IGBT (Insulated Gate Bipolar Transistor) Base

Gate IGT (Insulated Gate Thyristor)

IGCT (Integrated Gate-Commutated Cathode Thyristor)

Emitter

High Power Turn-off Devices

Power Semiconductors

Turn-off Devices

Thyristors ƒ Line commutated

© ABB Switzerland Ltd - 5 -

Transistors

ƒ Darlingtons ƒ IGBTs

Thyristors

ƒ GTOs ƒ IGCTs

ƒ Fast ƒ Bi-directional ƒ Pulse

Diodes ƒ Fast

ƒ Line commutated ƒ Avalanche

Power Semiconductors … are switches….

© ABB Switzerland Ltd - 6 -

VDC

VAC

….for converting electrical energy

Turn-on Switches (Thyristors) Thyristors (PCTs)

V

thyristors produce voltage distortion in phase control mode

„

„

t

will ultimately be replaced by ToDs, except...

© ABB Switzerland Ltd - 7 -

in AC configuration for: „

transfer switches

„

tap changers

„

line interrupters

V

t

1000 100

30

10

total energy

6

electrification

2

1

37%

% electrification

15%

0

2030

2020

2010

2000

Source : Mitsubishi Electric 1990

1970

1960

1950

1980

6%

3%

0.1 © ABB Switzerland Ltd - 8 -

397 147

200

100

57

1940

Millions of Barrels/Day

World Energy Consumption …

... drives the need for high power electronics

Energy trend By 2020: • Energy consumption will double • Electricity generation will double • Electrification of end-consumption will quintuple

Today, only 15% of electricity flows via electronics

© ABB Switzerland Ltd - 9 -

Medium Voltage conversion has only been economically possible in the last 10 years Power conversion at MV levels set to grow faster than LV (20% p.a.)

© ABB Switzerland Ltd - 10 -

SELF- COMMUTATED INVERTERS

Basic Topologies R

L S1

S3

S5

S2

S4

S6

DclampLs

IGCT Inverter

VR

Cclamp

Clamp circuit

© ABB Switzerland Ltd - 11 -

FWD1

S1

S3

FWD6

S5

VDC

IGBT Inverter S2

S4

S6

Turn-on waveforms for IGCTs and IGBTs Eon − circuit = (t 2 − t 0) •Vdc • ( Iload + Irr) 2 .... (1) Vswitch or L = VDC Iswitch

Iload Ipk di/dt|on

IFWD

Vswitch =

f(t) ton © ABB Switzerland Ltd - 12 -

t0 t3

t1

t2

Irr

t3

E on − device ≈ I load • ∫ V switch ( t ). dt ............. ( 2 ) t2

© ABB Switzerland Ltd - 13 -

DEVICES

© ABB Switzerland Ltd - 14 -

IGBTs

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IGBTs – key features „

Transistors with insulated gate

„

Allow dv/dt and di/dt control via gate signal (losses)

„

High on-state voltage (transistor)

„

High turn-on losses (no snubber)

„

Low gate power requirements (voltage control)

„

No passives required (independant dv/dt and di/dt control)

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HiPak™ High Power IGBT Modules

Voltage

Current

Type

Part Number

2500V 3300V 3300V 6500V

1200A 1200A 1200A 600A

Single Single Single Single

5SNA 1200E250100 5SNA 1200E330100 5SNA 1200G330100* 5SNA 0600G650100*

Vce 125°C 3.1V 3.8V 3.8V 4.7V

VF 125°C 1.8V 2.35V 2.35V 4.0V

* High voltage version

AlSiC base-plate & AlN substrate

Eoff 125°C 1.25J 1.95J 1.95J 3.5J

Eon 125°C 1.15J 1.89J 1.89J 4.0J

Vdc 1250V 1800V 1800V 3600V

StakPak™ - stackable press-packs (collector side) StakPak-H4: 2.5 kV/1300 to 3000 A StakPak-L2: 4.5 kV/600 to 1000 A

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StakPak-J6: 4.5 kV/2000 to 3000 A

StakPak-H6: 2.5 kV/ 2000A to 3000 A

IGBT Press-packs inert gas

molybdenum ceramic copper

Conventional IGBT presspack: requires tight mechanical tolerances silicon chip

close-up copper

module lid (copper)

sub-module frame (polymeric)

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current bypass

module outer frame (fibreglass reinforced polymer)

StakPak™ IGBT presspack with individual springs: suitable for long stacks with compounded tolerances

spring washer pack

∆x silicon chip

base-plate silicon gel

StakPak™ HVDC Valve

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Long stacks would require very tight mechanical tolerances to ensure identical force on each chip in each housing: „

on assembly

„

over time

„

with temperature cycling

„

with shock and vibration

© ABB Switzerland Ltd - 20 -

IGBT Trends

© ABB Switzerland Ltd - 21 -

IGBT Trends „

Higher voltages

„

Higher Safe Operating Area (SOA)

„

Softer (controlled) switching

Soft switching: 3.3kV SPT* IGBT/Diode chip-set 110

2200 Vce

90

1800

80

1600

70

1400

60

IGBT Turn-off Vcc= 1800V Ic= 50A RGoff= 33ohm Ls= 2.4µH Tj= 125°C

1200

Ic

50

1000

40

800

30 20

600 Vge

400

10

200

0

0

-10

-200

-20

-400

Time [250 nsec/div] 150 125

2200

IF

100

VR

2000

75

1800

50

1600

25

1400

0

1200

-25

1000

-50

800

-75

600

-100

400

-125

200

IF (A)

Diode Turn-off VR= 1800V IF= 100A RGon= 33ohm Ls= 2.4µH Tj= 125°C

2400

-150

* Soft Punch Through

Time [250 nsec/div]

0

VR (V)

© ABB Switzerland Ltd - 22 -

2000

Vce (V)

Ic (A), Vge (V)

100

90

5000

80

4500

70

4000 3500

60

3000 50 2500 40 30

high di/dt giving rise to EMI issues

20

conventional PT device

2000

SPT

1000

1500

© ABB Switzerland Ltd - 23 -

10

500

0 0.0

1.0

2.0

3.0

4.0

5.0

6.0

time [microseconds]

7.0

8.0

9.0

0 10.0

voltage [V]

current [A]

Soft switching: 8 kV IGBT PT vs SPT

3.3kV Diode RBSOA Performance 3.3kV/100A Diode RBSOA during Reverse Recovery VR= 2500V, IF= 200A, di/dt=1000A/µs, Ls= 2.4µH, Tj= 125°C 250 200

5500 IF = 2 x Inom inal

5000

150 100

4500 Inom inal

4000

50

3500

IF (A)

3000

-50

2500 VR

-100 -150

1500 Dynam ic Avalanche

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-200 -250 -300

2000

1000 500

Tim e [250 nsec/div]

Peak Power = 0.8 MW/cm2 No clamp, no snubber

0

VR (V)

SSCM 0

4.5kV IGBT RBSOA Performance 4.5kV/40A IGBT RBSOA during Turn-off Vcc= 3600V, Ic= 120A, RG= 0ohm, Ls= 12µH, Tj= 125°C 220

5500

180

4500

160

4000

140

Vce Ic = 3 x Inominal

3500

120

3000

100

2500

80

Dynamic Avalanche

60 40

© ABB Switzerland Ltd - 25 -

5000

SSCM

Inominal

1500 1000

20 0

2000

500 Vge

-20

0 -500

Time [250 nsec/div]

Peak Power = 0.5 MW/cm2 No Clamp, No Snubbers

Vce (V)

Ic (A), Vge (V)

200

6.5kV IGBT RBSOA Performance

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140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 -1 0 -2 0

SSCM Ic = 2 x In o m in a l V ce

D yn a m ic A v a la n c h e

In o m in a l

Vge T im e [2 5 0 n s e c /d iv ]

Peak Power = 0.25 MW/cm2 No Clamp, No Snubbers

7000 6500 6000 5500 5000 4500 4000 3500 3000 2500 2000 1500 1000 500 0 -5 0 0 -1 0 0 0

Vce (V)

Ic (A), Vge (V)

6.5kV/2x25A IGBT RBSOA during Turn-off Vcc= 4500V, Ic= 100A, RG= 0ohm, Ls= 20µH, Tj= 125°C

6.5kV IGBT Short Circuit Performance 6.5kV/25A IGBT SCSOA during Short Circuit Vcc= 4500V, Icpeak= 290A, VGE= 18V, Ls= 2.4µH, Tj= 25°C 300 275

6000

Ic > 10 x Inominal

© ABB Switzerland Ltd - 27 -

Vce

5000

225

4500

200

4000

175

3500

150

3000

125

2500

100

2000

75

1500

50

1000

25

500

0

Time [2 usec/div]

Peak Power = 1.35 MW/cm2 No Clamp, No Snubbers

0

Vce (V)

Ic (A)

250

5500

3.3kV IGBT Module RBSOA Performance

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3.3kV/1200A IGBT module during Turn-off (24 IGBTs) Vcc= 2600V, Ic= 5000A, RG= 1.5ohm, Ls= 280nH, Tj= 125°C

No clamp, no snubbers

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IGCTs

© ABB Switzerland Ltd - 30 -

IGCTs – key features „

Thyristor with integrated gate unit

„

Low on-state voltage (thyristor)

„

Negligible turn-on losses (turn-on snubber)

„

No explosive failures (fault current limitation by circuit)

Principle of IGCT Operation Anode

Anode

P

VAK

N

N

I AK P

Gate

P

Gate

N

P N

I GK

© ABB Switzerland Ltd - 31 -

Cathode

Conducting Thyristor

- VGK Cathode

Blocking Transistor

IGCT turn-off Vd (kV)

Ia (kA) Vdm anode voltage Vd

4 Itgq

3

3

2 1

4

thyristor

x

anode current Ia transistor

Tj = 90°C

1 0

0 starts to block

-10 © ABB Switzerland Ltd - 32 -

gate voltage Vg -20 Vg (V)

2

15

20

25

30

35

t (µ s)

General turn-on waveforms for IGCTs and IGBTs

Eon-circuit Vswitch or L = VDC Iswitch Iload

IFWD

Ipk

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di/dton

Vswitch = f(t)

ton t0

Eon-device

t1

t2

IRR

t3

1500 A IGBT turning on 1000 A from 3000 V

IC [250 A/div] 833 A/µs EON = 7.4 WS

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EON circuit

EON device VCE [500 V/div]

time [ 2 µs/div]

EON-circuit = 4.1 Ws

4000 A IGCT turning on 1000 A from 3000 V 0.7

EON-device

VAK, IA, [V, A]

3000 2500

0.5

2000

0.4

1500

0.3

1000

0.2

500 0 0.E+00 © ABB Switzerland Ltd - 35 -

0.6

0.1

1340 A/µs

5.E-06

1.E-05

2.E-05

2.E-05

t [s]

Eon − circuit = (t 2 − t 0) • Vdc • ( Iload + Irr ) 2 .... (1) =1.5 µs • 3000V • 1900 A /2 = 4.3 Ws

0 3.E-05

Eon [Ws]

3500

Adjustment of dv/dt by lifetime control

VAK

IA, VAK, [A, V]

4000 3000

medium lifetime low lifetime high lifetime

2000 IA

1000

© ABB Switzerland Ltd - 36 -

0 6

8

10

t [µ s]

12

14

© ABB Switzerland Ltd - 37 -

Low inductance housing

4 kA/4.5 kV IGCTs power supply connection

visible LED indicators

IGCT

zzzz all copper housing

Status Feedback

Command Signal

© ABB Switzerland Ltd - 38 -

optical fibre connectors

GCT

© ABB Switzerland Ltd - 39 -

30 MW IGCT Power Management

15 + 15 MW 3-Level Back-to-Back Converter for three-phase to single-phase conversion Converter efficiency = 99.2%

4 kA/4.5 kV IGCT at 25 kHz in burst mode Anode voltage and current (V, A)

5000 4500 4000

v I

3500 3000 2500 2000 1500 1000

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500 0 0.E+00

2.E-04

4.E-04

6.E-04

8.E-04

1.E-03

time (s)

VDC start = 3.5 kV

VDM peak = 4.5 kV

TJ start = 25 °C

α = 0.5

ITGQ peak = 4 kA

© ABB Switzerland Ltd - 41 -

IGCT Outlook

© ABB Switzerland Ltd - 42 -

IGDT

Structure of IGDT – Integrated Gate Dual Transistor K

G1

K

G1

K

G1

G1

N P N P

G2

A

G2 G2

© ABB Switzerland Ltd - 43 -

A Dual Gate Turn-off Thyristor

A

G2

91 mm 4.5 kV IGDT turn-off

© ABB Switzerland Ltd - 44 -

no tail current

Dual-gate IGCT @ 85°C - gates triggered simultaneously VDC = 2.8 kV ITGQ = 3.3 kA VDRM = 4.5 kV VTM = 2.1 V @ 4 kA/125°C

IGDT Series connection: leakage current reduction 140 120 anode gate floating (no bias)

ID (mA)

100 80 60

(V DC = 2800 V)

anode gate with 20V reverse biased

40

© ABB Switzerland Ltd - 45 -

20 0 75

100

125

150

T J (°C) 140°C

175

91 mm 4.5 kV IGDT - Leakage current control

© ABB Switzerland Ltd - 46 -

ID - anode leakage current [mA]

VGK= -20V, TJ = 25°C

35 30 25 20

500V 1000V 1500V 2000V 2400V

15 10 5 0 0

5

10

15

IGA Anode gate current [mA]

20

25

IGDT anode gate control of tail current IDUT2

V1

VG1

© ABB Switzerland Ltd - 47 -

V1

VG1

VG2

kV kA

kA

V

IDUT2

VG2

kV

1.0

2.5

1.0

2.5

0.8

2.0

0.8

2.0

0.6

1.5

0.6

1.5

0.4

1.0

0.4

1.0

0.2

0.5

0.2

0.5

0.0

0.0

0.0

0.0

2.4

V

2.4

2.2

2.2

2.0

2.0

1.8

1.8

1.6

1.6

1.4

1.4

300

320

340

300

µs

320

340 µs

© ABB Switzerland Ltd - 48 -

Increased SOA

IGCT SOA improvement at 4.5 kV

© ABB Switzerland Ltd - 49 -

TODAY

38 mm reverse conducting

TOMORROW

250 kW/cm2

1000 kW/cm2

250 kW/cm2

400 kW/cm2

91 mm asymmetric

6.5 kA @ 2.8 kVDC on 91 mm wafer IT

7000

5

Snubberless turn-off Tj = 125°C, VD = 2.8kV

© ABB Switzerland Ltd - 50 -

5000

0 -5

4000 -10

VAK

3000

-15

2000 1000

-20

0

-25 1

3

5

7

9

t [µ s] Developmental 4” 4.5 kV IGCT with improved GU and silicon design allowing 50% SOA improvement

VGK [V]

VAK, IT [V. A]

6000

© ABB Switzerland Ltd - 51 -

4.5

1.8

4

1.6

VAK

Ioff

3.5

1.4

3

1.2

P

2.5

1

2

0.8

TJ = 115°C

1.5

0.6

1

0.4

0.5

0.2

0

0 -3

-2

-1

0

1

2

3

4

5

6

t [µ s] Developmental 2” 4.5 kV RC_IGCT with improved GU and silicon design allowing 300% SOA improvement

7

Ioff [kA]

VAK [kV], P [MW]

1.3 kA @ 2.8 kVDC on 38 mm RC wafer

© ABB Switzerland Ltd - 52 -

10 kV IGCT

© ABB Switzerland Ltd - 53 -

Engineering Sample of 68 mm 10 kV IGCT

Forward Blocking Characteristics at 25°C

© ABB Switzerland Ltd - 54 -

magnified by factor 1000: 1 µA / div

(<17 µA @ 10 kV, 25°C)

Forward Blocking Characteristics at 125°C

© ABB Switzerland Ltd - 55 -

(<14 mA @ 7 kV, 125°C)

(8-13 mA @ 6 kV, 125°C, PL=50W-80W ( 5%-10% of PRP)

Turn-off Waveforms (SOA)

© ABB Switzerland Ltd - 56 -

Operating conditions: VDC= 7kV, IA = 1000A, Tj = 85°C Switching characteristics: Eoff = 14.8 J, VAK,max = 8 kV, toff = 8µs, tf = 1µs, ttail = 5µs, 250 kW/cm2

© ABB Switzerland Ltd - 57 -

Conclusions

SOA Limits of HV Devices are increasing I Pushing the RBSOA Limits

nxI 2xI

Device Capability nom

New Limits nom State-Of-The-Art Limits

V

© ABB Switzerland Ltd - 58 -

Vrated „

VSSCM

Under RBSOA operational conditions „

Devices withstands dynamic avalanche mode

„

IGBTs withstands “SSCM” mode

„

Devices achieve the ultimate square SOA behaviour

Switching-Self-Clamping-Mode “SSCM” dv/dt

Dynamic Avalanche

Self Clamping

VDC

IC

© ABB Switzerland Ltd - 59 -

di

„

VSSCM − VDC = dt LS

IGBT SOA turn-off waveforms including SSCM „

devices start to limit voltage during turn-off „ over-voltage safely reaches the static breakdown after turn-off

© ABB Switzerland Ltd - 60 -

„

For high power conversion, only two devices possible today: „

IGBT

„

IGCT

„

Safe Operating Area is increasing from 250 kW/cm2 to 1 MW/cm2

„

IGDT offers possibility of high voltage devices with low losses (future?)

© ABB Switzerland Ltd - 61 -

Challenges

Challenges for HV Power ToDs

© ABB Switzerland Ltd - 62 -

„

High voltage devices present following challenges: „

Dynamic Avalanche ruggedness (for reliable operation)

„

Short Circuit Failure Modes (IGBT) and fault interruption (IGCT)

„

Design Trade-off between Losses and SOA

„

Critical Punch-Through voltages (for controllable voltage, low EMI)

„

High DC link voltage (leakage stability, cosmic ray withstand)

„

Large inductance and overshoot voltages in HV power systems

„

High frequency (limited by losses, TJ)

Challenges for this decade „

10 kV switches with 1 kHz snubberless operation (for the 6.9 kVRMS MV line for drives and power conditioners)

„

Snubberless series operation (static and dynamic for MV lines > 6.9 kVRMS)

„

Power supply free operation (autogenous power supply for series connection)

© ABB Switzerland Ltd - 63 -

„

System cost-reduction (e.g. pay-back times ≈ 1 year for MV Drives)

„

Reduced thermal resistance and increased TJ

„ Reduced

losses?